Inventor: Ralph Daniel Reymond
Current U.S. Classification: 313/54; 310/303; 310/304; 313/146; 313/148
专利号：2926268
Filing date: Dec 29, 1954
Issue date: Feb 23, 1960
This invention relates to electron discharge tube devices and more particularly to a multi-element tube which has incorporated therewith an internal source of power.
迄今为止，例如，将三极管类型的管组成，以其基本形式包括加热器细丝，发射极阴极，控制网格和集电极板，阴极，晶体和板或构成基部元件的阳极。在无限种类的电路中，这种管已经连接到外部电源以导出它们的能量来源，以加热灯丝，从而驱动阴极。在一些管中，阴极直接加热而不是间接加热。在各种环境中，这种管道已经非常成功，但它们具有必须与它们相关联的缺点，昂贵且繁重的电源。此外，他们的寿命相对较短。
本发明克服了这些先前外部动力管中固有的缺点。实际上，本发明的一个目的是提供一种管，其中电源是管本身的整体元件。
It is a further object of this invention to provide a tube in which the cathode source of electrons is replaced by a radioactive source providing charged particle emission.
本发明的另一个目的是提供一种管，其中少于或没有发热。
通常，本发明的目的是通过代替带电粒子发射的放射源和相关的二次电子发射材料，用于多元件管的细丝和阴极来实现的。当辐射粒子撞击发射元件时，从二次发射元件驱动的电子将朝向收集板或阳极流动。中间板和发射器是必要的控制网格和/或抑制网格或网格。
当与附图结合读数时，通过对所描述的描述将清楚地对所要求保护的发明的其他目的。在整个描述和附图中，如零件相同的数字表示。
图。图1是根据本发明制造的管的优选实施例的剖视侧视图，并且
Fig. 2 is a sectional side view of another preferred embodiment of tube made in accordance with the teachings of the invention.
现在参考图1.如图1所示，由箭头2指定的放射辐射的源1靠近半导体材料3定位3.在半导体材料的侧面远离放射性硬颗粒的辐射源位于辐射源，并且超出来自半导体材料的栅格被定位为板5。
The above described elements are enclosed within a sealed tube 6. Leads 7 and 8 extend through the tube envelope so that effective utilization may be made of the tube through the grid 4 and plate 5. Around the semi-conductor 3 is positioned a collector 9 having an external lead 10.
为了有效地定位带电粒子的放射源相对于半导体发射的发射，可以通过绝缘杆11保持，绝缘杆11具有延伸穿过包络的部分。可以使用在14处示意性地示出的真空型密封，从而可以在不影响的情况下进行放射性排放源的轴向位置的适当调整。
10 gaseous state of the tube. One example of a seal which might be used is shown and described in Hotine Patent No. 2,416,318, of February 25, 1947. This is riot intended to be limiting, however, since it is obvious that many ways may be devised for positioning the source.
在管的操作中，原子材料（例如锶90）的放射源1，铀的原子裂变的废料发出了主要高能量β粒子的硬辐射射线2 .-这些是通过适当成型的指导源极靠近辐射源的半导体晶片3。可能的半导体材料是硅，铅亚硫酸盐，硒等类似材料。半导体材料用作“：显示为箭头13所示的发射电子。通过放射源发出的高能粒子的初始线性速度用于敲击二次发射晶片的电子，并且电子移动将晶片的流朝向收集板;二次发射器内的多次发射发生并增加流的密度。由于硅具有电子的粘合性与其他材料的电子，因此似乎是使用的优选材料。
随着高能辐射粒子2罢工d passes through the silicon, it drives off an estimated 200,000 electrons 13. Since the strontium 90 emits , several billion particles per second a great number of. electrons are driven from the semi-conductor or wafer 3. The output from this source is in the nature of one-millionth watt. The electrons which are driven from the wafer 3 are directed through the control grid which is connected to a modulating source of signals to a plate where they may be received and utilized as a rectified, amplified, or oscillating signal. This wafer 3 may serve as a lens to guide the electrons to the plate and to’this end may be suitably shaped.
Since electrons are continuously being driven from the wafer, it will be positively charged and therefore can be used to polarize the plate through connection 12 which may be made on the edge of said wafer. To eliminate any spurious electron flow from the secondary source 3, a collector 9 is provided which will pick up any stray electrons and conduct them through a lead 10 to ground.
现在参考图1. 2放射性辐射源1'定位在部件的球面布置的中心。这些包括靠近源极近的发射器材料3'。作为同心球的围绕发射器3'是栅格4'并且仍然从源进一步躺着是作为同心球的集电极板5'。
所有这些元件，排除可能或可能不属于的源，在密封的包络6'内彼此保持间隔开的关系，其形状是球形的。
To provide access to the radioactive radiation source, which is movable toward and away from the geometrical center of the spherical elements by means of insulating rod 11′, a conical shaped section is provided which forms a cavity in the assembly into which the source may be inserted.
在密封的封套内，但是关于锥形切口腔的定位位于截短的锥形元件......使用图像下载完整版本
